Silicon MOSFET Power Transistor 175MHz,6W RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. 4 FEATURES High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz note(3) APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. 1 2 3 PINS 1:GATE 2:SOURCE 3:DRAIN 4:FIN(SOURCE) n.
High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz note(3) APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. 1 2 3 PINS 1:GATE 2:SOURCE 3:DRAIN 4:FIN(SOURCE) note: (1)Torelance of no designation means typical value. Dimension in mm. (2) :Dipping area RoHS COMPLIANT RD06HVF1-101 is a RoHS compliant products. :Copper of the ground work is exposed in case of frame separation. (3) RoHS compliance is indicate by the letter “G” after the lot marking. This product include the lead in high melting temperature type solders. How ever,it applicable to the follo.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RD06HHF1 |
Mitsubishi Electric |
Silicon RF Power MOS FET | |
2 | RD0605-D |
CARLO GAVAZZI |
Solid State Relays | |
3 | RD00HHS1 |
Mitsubishi Electric |
RoHS Compliance | |
4 | RD00HVS1 |
Mitsubishi Electric |
RoHS Compliance | |
5 | RD0106T |
Sanyo Semicon Device |
High-Speed Switching Diode | |
6 | RD01MUS1 |
Mitsubishi Electric |
Silicon RF Power MOS FET | |
7 | RD01MUS2 |
Mitsubishi Electric |
Silicon MOSFET Power Transistor | |
8 | RD01MUS2B |
Mitsubishi Electric Semiconductor |
Silicon MOSFET Power Transistor | |
9 | RD02LUS2 |
Mitsubishi |
Silicon RF Power MOS FET | |
10 | RD02MUS1 |
Mitsubishi Electric |
Silicon MOSFET Power Transistor | |
11 | RD02MUS1B |
Mitsubishi Electric Semiconductor |
Silicon MOSFET Power Transistor | |
12 | RD02MUS2 |
Mitsubishi Electric |
RoHS Compliance |