RD06HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications. OUTLINE DRAWING 3.2+/-0.4 4.8MAX 9+/-0.4 •High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz 12.3+/-0.6 FEATURES 2 For output stage of high power amplifiers in HF band mobile radio sets. 12.3MIN APPLICATION 1.2+/-0.4 0.8+0.10/-0.15 1 2 3 0.5+0.10.
2 For output stage of high power amplifiers in HF band mobile radio sets. 12.3MIN APPLICATION 1.2+/-0.4 0.8+0.10/-0.15 1 2 3 0.5+0.10/-0.15 2.5 2.5 3.1+/-0.6 4.5+/-0.5 5deg PIN 1.Gate 2.Source 3.Drain UNIT:mm 9.5MAX ABSOLUTE MAXIMUM RATINGS www.DataSheet4U.com (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25°C Zg=Zl=50Ω junction to case RATINGS UNIT 50 V +/- 20 V 27.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RD06HVF1 |
Mitsubishi Electric Semiconductor |
MOS FET type transistor specifically designed for VHF RF power amplifiers applications | |
2 | RD0605-D |
CARLO GAVAZZI |
Solid State Relays | |
3 | RD00HHS1 |
Mitsubishi Electric |
RoHS Compliance | |
4 | RD00HVS1 |
Mitsubishi Electric |
RoHS Compliance | |
5 | RD0106T |
Sanyo Semicon Device |
High-Speed Switching Diode | |
6 | RD01MUS1 |
Mitsubishi Electric |
Silicon RF Power MOS FET | |
7 | RD01MUS2 |
Mitsubishi Electric |
Silicon MOSFET Power Transistor | |
8 | RD01MUS2B |
Mitsubishi Electric Semiconductor |
Silicon MOSFET Power Transistor | |
9 | RD02LUS2 |
Mitsubishi |
Silicon RF Power MOS FET | |
10 | RD02MUS1 |
Mitsubishi Electric |
Silicon MOSFET Power Transistor | |
11 | RD02MUS1B |
Mitsubishi Electric Semiconductor |
Silicon MOSFET Power Transistor | |
12 | RD02MUS2 |
Mitsubishi Electric |
RoHS Compliance |