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RD01MUS2B |
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| Part Number | RD01MUS2B |
| Manufacturer | Mitsubishi Electric Semiconductor |
| Description | RD01MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device has an internal monolithic zener diode from gate to source for ESD protection. FEATURES... |
| Features |
•High power gain and High Efficiency. Pout 1.6W Typ, Gp 15dBTyp, 70%Typ 0.4+/-0.07 0.5+/-0.07 0.4+/-0.07 TYPE NAME 0.8 MIN 2.5+/-0.1 4.4+/-0.1 1.6+/-0.1 LOT No. 1 0. φ 1.5+/-0.1 1 2 1.5+/-0.1 3 1.5+/-0.1 0.4 +0.03 -0.05 Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm @Vdd=7.2V,f=527MHz •Integrated gate protection diode APPLICATION For output stage of high power amplifiers in VHF/UHF Band mobile radio sets. RoHS COMPLIANCE RD01MUS2B-101,T113 is a RoHS compliant products. 0.1 MAX www.DataSheet.net/ This product includes the lead in high melting temperature type solders. However, i... |
| Document |
 RD01MUS2B Data Sheet
PDF 3.81MB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | RD01MUS2 |
Mitsubishi Electric |
Silicon MOSFET Power Transistor |
|
| 2 | RD01MUS1 |
Mitsubishi Electric |
Silicon RF Power MOS FET |
|
| 3 | RD0106T |
Sanyo Semicon Device |
High-Speed Switching Diode |
|
| 4 | RD00HHS1 |
Mitsubishi Electric |
RoHS Compliance |
|
| 5 | RD00HVS1 |
Mitsubishi Electric |
RoHS Compliance |
|