Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
RD0106T |
Click to view a larger image
| Part Number | RD0106T |
| Manufacturer | Sanyo Semicon Device |
| Description | www.DataSheet.co.kr Ordering number : ENA1704 RD0106T SANYO Semiconductors DATA SHEET RD0106T Features • • • • • Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode High breakd... |
| Features |
• • • • • Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode High breakdown voltage (VRRM=600V). Fast reverse recovery time. Low forward voltage (VF max=1.3V). Low switching noise. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM Conditions Ratings 600 1 Sine wave 10ms 10 150 --55 to +150 Unit V A A °C °C IO IFSM Tj Tstg Electrical Characteristics at Ta=25°C Parameter Reverse Voltage Forward Voltage Reverse ... |
| Document |
 RD0106T Data Sheet
PDF 269.27KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RD01MUS1 |
Mitsubishi Electric |
Silicon RF Power MOS FET |
|
| 2 | RD01MUS2 |
Mitsubishi Electric |
Silicon MOSFET Power Transistor |
|
| 3 | RD01MUS2B |
Mitsubishi Electric Semiconductor |
Silicon MOSFET Power Transistor |
|
| 4 | RD00HHS1 |
Mitsubishi Electric |
RoHS Compliance |
|
| 5 | RD00HVS1 |
Mitsubishi Electric |
RoHS Compliance |
|