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PN100/PN100A/MMBT100/MMBT100A — NPN General Purpose Amplifier PN100/PN100A/MMBT100/MMBT100A NPN General Purpose Amplifier • This device is designed for general purpose amplifier applications at collector currents to 300mA. • Sourced from process 10. October 2008 1 TO-92 1. Emitter 2. Base 3. Collector Mark: PN100/PN100A C E B SOT-23 Absolute Maximum Rat.
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PN100A - TAITRON
PN100 PN100A VCEO Collector-Emitter Voltage 35 VCBO Collector-Base Voltage 60 VEBO Emitter-Base Voltage 5 IC.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PN100 |
TAITRON |
Small Signal General Purpose Transistors |
|
| 2 | PN100 |
Fairchild Semiconductor |
NPN General Purpose Amplifier |
|
| 3 | PN1011 |
Premo |
(PN1xx) SMD Power Inductors Unshielded |
|
| 4 | PN105 |
Premo |
(PN1xx) SMD Power Inductors Unshielded |
|
| 5 | PN107 |
Panasonic Semiconductor |
(PN108) Silicon NPN Phototransistors |
|
| 6 | PN108 |
Panasonic Semiconductor |
(PN107) Silicon NPN Phototransistors |
|
| 7 | PN108CL |
Panasonic Semiconductor |
Silicon NPN Phototransistor |
|
| 8 | PN10HN60 |
Chipown |
N-Channel Superjunction MOSFET |
|
| 9 | PN10HN60-CAI-T1 |
Chipown |
N-Channel Superjunction MOSFET |
|
| 10 | PN10HN60-CBI-T1 |
Chipown |
N-Channel Superjunction MOSFET |
|
| 11 | PN1105 |
Premo |
SMD Power Inductors Unshielded |
|
| 12 | PN1108 |
Premo |
SMD Power Inductors Unshielded |
|