The NeoFET, Chipown’s new generation of high voltage super-junction MOSFETs, based on an advanced deep trench filling process technologies. The NeoFET MOSFET achieves an approximate 70% reduction in specific on-resistance compared to that of a conventional MOSFET. By combining the experience of the leading SJ MOSFET supplier, utilizing this advanced technolo.
■ RDS(on) = 0.34Ω ( Typ.)@ VGS = 10V, ID = 5A
■ Extremely high dv/dt capablity
■ Very high commutation ruggedness
■ Extremely low losses due to very low Rdson
*Qg
■ Ultra low gate charge ( Typ. Qg = 25nC)
■ Low effective output capacitance
■ 100% avalanche tested
■ JEDEC qualified, Pb-free plating
Applications
■ PC ATX Power
■ Adapter
■ LCD and PDP TV
■ Lighting
■ Server, Telecom,
■ UPS
■ Switching applications
Pin Assignments
TO-220
TO-220FP
Order codes PN10HN60-CAI-T1 PN10HN60-CBI-T1
Package TO220 TO220FP
8/F, ChuangYuan Building No.21-1 Changjiang Road, Wuxi New Destrict Tel: +86(510).
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PN10HN60-CBI-T1 |
Chipown |
N-Channel Superjunction MOSFET | |
2 | PN10HN60 |
Chipown |
N-Channel Superjunction MOSFET | |
3 | PN100 |
TAITRON |
Small Signal General Purpose Transistors | |
4 | PN100 |
Fairchild Semiconductor |
NPN General Purpose Amplifier | |
5 | PN100A |
Fairchild Semiconductor |
NPN Amplifier | |
6 | PN100A |
TAITRON |
Small Signal General Purpose Transistors | |
7 | PN1011 |
Premo |
(PN1xx) SMD Power Inductors Unshielded | |
8 | PN105 |
Premo |
(PN1xx) SMD Power Inductors Unshielded | |
9 | PN107 |
Panasonic Semiconductor |
(PN108) Silicon NPN Phototransistors | |
10 | PN108 |
Panasonic Semiconductor |
(PN107) Silicon NPN Phototransistors | |
11 | PN108CL |
Panasonic Semiconductor |
Silicon NPN Phototransistor | |
12 | PN1105 |
Premo |
SMD Power Inductors Unshielded |