Update Specification Made by Pablo Pozo 4 SMD Power Inductors P R E M O All rights reserved. Passing on of this document, use and communication of contents not permitted without written authorisation. .
P R E M O
All rights reserved. Passing on of this document, use and communication of contents not permitted without written authorisation.
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PN1105
SMD
Power
Inductors
Unshielded
C/Severo Ochoa 33
– Parque Tecnológico de Andalucía. 29590 Campanillas .Málaga (Spain) Phone +34 951 231 320 Fax +34 951 231 321 E-mail: [email protected] Web http://www.grupopremo.com
5. Electrical Characteristics PN1105
(10µH
–
200µH)
DWG No. PN1105
– 100M PN1105
– 120M PN1105.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PN1108 |
Premo |
SMD Power Inductors Unshielded | |
2 | PN115 |
Panasonic Semiconductor |
Silicon NPN Phototransistor | |
3 | PN116 |
Panasonic Semiconductor |
Silicon planar type | |
4 | PN100 |
TAITRON |
Small Signal General Purpose Transistors | |
5 | PN100 |
Fairchild Semiconductor |
NPN General Purpose Amplifier | |
6 | PN100A |
Fairchild Semiconductor |
NPN Amplifier | |
7 | PN100A |
TAITRON |
Small Signal General Purpose Transistors | |
8 | PN1011 |
Premo |
(PN1xx) SMD Power Inductors Unshielded | |
9 | PN105 |
Premo |
(PN1xx) SMD Power Inductors Unshielded | |
10 | PN107 |
Panasonic Semiconductor |
(PN108) Silicon NPN Phototransistors | |
11 | PN108 |
Panasonic Semiconductor |
(PN107) Silicon NPN Phototransistors | |
12 | PN108CL |
Panasonic Semiconductor |
Silicon NPN Phototransistor |