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www.DataSheet4U.com PN0315 , PN0302 , PN0403 , PN0502 , PN0602 , PN0603 , PN54 , PN75 , PN105 , PN1011 & PN1307 SMD Power Inductors Unshielded C/Severo Ochoa 33 – Parque Tecnológico de Andalucía. 29590 Campanillas .Málaga (Spain) Phone +34 951 231 320 Fax +34 951 231 321 E-mail: [email protected] Web http://www.grupopremo.com 1. Configuration.
15 2.7 3.6 3.6 4.75 2. Schematic Diagram 3. Materials a.- Core : Ferrite DR core b.- Wire : Enamelled copper wire (class F) c.- Terminal : Ag / Ni / Sn d.- Remark : Lead content 200ppm max. include ferrite 4. General Specification a.- Temp. rise 30ºC max.(PN0315) 40ºC max.(PN0302,PN0403,PN0602,PN0603, PN54,PN75,PN105,PN1011,PN1307) 20ºC max.(PN0502) b.- Rated current : Base on temp. rise & ∆L/L0A = 10% c.- Storage temp. : -40ºC ~ +125ºC d.- Operating temp. : -40ºC ~ +105ºC e.- Resistance to solder heat : 260ºC. 10 secs 1 SMD Power Inductors P PR RE EM MO O All rights reserved. Passing o.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PN100 |
TAITRON |
Small Signal General Purpose Transistors |
|
| 2 | PN100 |
Fairchild Semiconductor |
NPN General Purpose Amplifier |
|
| 3 | PN100A |
Fairchild Semiconductor |
NPN Amplifier |
|
| 4 | PN100A |
TAITRON |
Small Signal General Purpose Transistors |
|
| 5 | PN1011 |
Premo |
(PN1xx) SMD Power Inductors Unshielded |
|
| 6 | PN107 |
Panasonic Semiconductor |
(PN108) Silicon NPN Phototransistors |
|
| 7 | PN108 |
Panasonic Semiconductor |
(PN107) Silicon NPN Phototransistors |
|
| 8 | PN108CL |
Panasonic Semiconductor |
Silicon NPN Phototransistor |
|
| 9 | PN10HN60 |
Chipown |
N-Channel Superjunction MOSFET |
|
| 10 | PN10HN60-CAI-T1 |
Chipown |
N-Channel Superjunction MOSFET |
|
| 11 | PN10HN60-CBI-T1 |
Chipown |
N-Channel Superjunction MOSFET |
|
| 12 | PN1105 |
Premo |
SMD Power Inductors Unshielded |
|