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Update Specification Made by Pablo Pozo 4 SMD Power Inductors P R E M O All rights reserved. Passing on of this document, use and communication of contents not permitted without written authorisation. .
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PN1108
SMD
Power
Inductors
Unshielded
C/Severo Ochoa 33
– Parque Tecnológico de Andalucía. 29590 Campanillas .Málaga (Spain) Phone +34 951 231 320 Fax +34 951 231 321 E-mail: [email protected] Web http://www.grupopremo.com
5. Electrical Characteristics PN1108
(0.50µH
–
220µH)
DWG No. PN1108
– R50N PN1108
– R80N PN1108
– 1R3M PN1108
– 2R0M PN1108
– 3R3M PN1108
– 4R5M PN1108
– 6R5M PN1108
– 100M PN1108
– 150M PN1108
– 220M PN1108
– 330M PN1.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PN1105 |
Premo |
SMD Power Inductors Unshielded |
|
| 2 | PN115 |
Panasonic Semiconductor |
Silicon NPN Phototransistor |
|
| 3 | PN116 |
Panasonic Semiconductor |
Silicon planar type |
|
| 4 | PN100 |
TAITRON |
Small Signal General Purpose Transistors |
|
| 5 | PN100 |
Fairchild Semiconductor |
NPN General Purpose Amplifier |
|
| 6 | PN100A |
Fairchild Semiconductor |
NPN Amplifier |
|
| 7 | PN100A |
TAITRON |
Small Signal General Purpose Transistors |
|
| 8 | PN1011 |
Premo |
(PN1xx) SMD Power Inductors Unshielded |
|
| 9 | PN105 |
Premo |
(PN1xx) SMD Power Inductors Unshielded |
|
| 10 | PN107 |
Panasonic Semiconductor |
(PN108) Silicon NPN Phototransistors |
|
| 11 | PN108 |
Panasonic Semiconductor |
(PN107) Silicon NPN Phototransistors |
|
| 12 | PN108CL |
Panasonic Semiconductor |
Silicon NPN Phototransistor |
|