Phototransistors PNZ107, PNZ108 (PN107, PN108) Silicon NPN Phototransistors PNZ107 4.6 0.15 Glass lens Unit : mm For optical control systems Features High sensitivity : ICE(L) = 5 mA (min.) (at L = 100 lx) Narrow directional sensitivity for effective use of light input Fast response : tr = 5 µs (typ.) Signal mixing capability using base pin (PNZ0108) TO-1.
High sensitivity : ICE(L) = 5 mA (min.) (at L = 100 lx) Narrow directional sensitivity for effective use of light input Fast response : tr = 5 µs (typ.) Signal mixing capability using base pin (PNZ0108) TO-18 standard type package
0. 15 0 1.
12.7 min.
6.3 0.3
2- 0.45 0.05
2.54 0.25
2 0.
45
0
3
1.
2 1
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Collector to emitter voltage Collector to base voltage Emitter to collector voltage Emitter to base voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature
*
5.75 max.
Symbol VCEO VCBO
*
Rat.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PN100 |
TAITRON |
Small Signal General Purpose Transistors | |
2 | PN100 |
Fairchild Semiconductor |
NPN General Purpose Amplifier | |
3 | PN100A |
Fairchild Semiconductor |
NPN Amplifier | |
4 | PN100A |
TAITRON |
Small Signal General Purpose Transistors | |
5 | PN1011 |
Premo |
(PN1xx) SMD Power Inductors Unshielded | |
6 | PN105 |
Premo |
(PN1xx) SMD Power Inductors Unshielded | |
7 | PN107 |
Panasonic Semiconductor |
(PN108) Silicon NPN Phototransistors | |
8 | PN108CL |
Panasonic Semiconductor |
Silicon NPN Phototransistor | |
9 | PN10HN60 |
Chipown |
N-Channel Superjunction MOSFET | |
10 | PN10HN60-CAI-T1 |
Chipown |
N-Channel Superjunction MOSFET | |
11 | PN10HN60-CBI-T1 |
Chipown |
N-Channel Superjunction MOSFET | |
12 | PN1105 |
Premo |
SMD Power Inductors Unshielded |