PHX23NQ11T - NXP

PHX23NQ11T N-Channel MOSFET

N-channel enhancement mode field-effect transistor in a fully isolated encapsulated plastic package using TrenchMOS™ technology. 1.2 Features s Low on-state resistance s Isolated package. 1.3 Applications s DC-to-DC converters s Switched-mode power supplies. 1.4 Quick reference data s VDS ≤ 110 V s Ptot ≤ 41.6 W s ID ≤ 16 A s RDSon ≤ 70 mΩ. 2. Pinning inf.

Features

s Low on-state resistance s Isolated package. 1.3 Applications s DC-to-DC converters s Switched-mode power supplies. 1.4 Quick reference data s VDS ≤ 110 V s Ptot ≤ 41.6 W s ID ≤ 16 A s RDSon ≤ 70 mΩ. 2. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT186A (TO-220F) simplified outline and symbol Description gate (g) drain (d) source (s) mounting base; isolated g mbb076 Simplified outline mb Symbol d s 1 2 3 MBK110 SOT186A (TO-220F) Philips Semiconductors PHX23NQ11T N-channel TrenchMOS™ standard level FET w w w . D a t a S h e e t 4 3. Ordering information Table 2: Ordering in.