N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHX2N50E is supplied in the SOT186A full pack, isolated package. PINNING PIN 1 2 3 case gate drain sour.
• Repetitive Avalanche Rated
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Isolated package
PHX2N50E
SYMBOL
d
QUICK REFERENCE DATA VDSS = 500 V
g
ID = 1.4 A RDS(ON) ≤ 5 Ω
s
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHX2N50E is supplied in the SOT186A full pack, isolated package.
PINNING
PIN 1 2 3 case gate drain sou.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PHX2N40E |
NXP |
PowerMOS transistor Isolated version of PHP4N40E | |
2 | PHX2N60E |
NXP |
PowerMOS transistors Avalanche energy rated | |
3 | PHX20N06T |
NXP |
N-channel standard level FET | |
4 | PHX23NQ10T |
NXP |
N-channel TrenchMOS transistor | |
5 | PHX23NQ11T |
NXP |
N-Channel MOSFET | |
6 | PHX27NQ11T |
NXP |
N-Channel MOSFET | |
7 | PHX10N40E |
NXP |
PowerMOS transistors Avalanche energy rated | |
8 | PHX14NQ20T |
NXP |
N-channel TrenchMOS transistor | |
9 | PHX15N06E |
NXP |
PowerMOS transistor Isolated version of PHP20N06E | |
10 | PHX18NQ11T |
NXP Semiconductors |
N-channel TrenchMOS standard level FET | |
11 | PHX18NQ20T |
NXP |
N-channel enhancement mode field-effect transistor | |
12 | PHX1N40 |
NXP |
PowerMOS transistor |