N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHX18NQ20T in SOT186A. 2. Features s s s s s TrenchMOS™ technology Low on-state resistance Fast switching Low thermal resistance Isolated tab. 3. Applications c c s s s s Off-line switched mode power supplies Television and computer .
s s s s s TrenchMOS™ technology Low on-state resistance Fast switching Low thermal resistance Isolated tab. 3. Applications c c s s s s Off-line switched mode power supplies Television and computer monitor power supplies DC to DC converters Motor control circuits 4. Pinning information Table 1: Pin 1 2 3 Tab Pinning - SOT186A, simplified outline and symbol Description gate (g) isolated tab d Simplified outline Symbol drain (d) source (s) isolated 03ab49 g 123 s 03ab30 1. TrenchMOS is a trademark of Royal Philips Electronics. Philips Semiconductors PHX18NQ20T N-channel FET 5. Quic.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PHX18NQ11T |
NXP Semiconductors |
N-channel TrenchMOS standard level FET | |
2 | PHX10N40E |
NXP |
PowerMOS transistors Avalanche energy rated | |
3 | PHX14NQ20T |
NXP |
N-channel TrenchMOS transistor | |
4 | PHX15N06E |
NXP |
PowerMOS transistor Isolated version of PHP20N06E | |
5 | PHX1N40 |
NXP |
PowerMOS transistor | |
6 | PHX1N40E |
NXP |
PowerMOS transistor Isolated version of PHP2N40E | |
7 | PHX1N50E |
NXP |
PowerMOS transistor Isolated version fo PHP1N50E | |
8 | PHX1N60E |
NXP |
PowerMOS transistor Isolated version of PHP1N60E | |
9 | PHX20N06T |
NXP |
N-channel standard level FET | |
10 | PHX23NQ10T |
NXP |
N-channel TrenchMOS transistor | |
11 | PHX23NQ11T |
NXP |
N-Channel MOSFET | |
12 | PHX27NQ11T |
NXP |
N-Channel MOSFET |