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PHX23NQ11T |
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| Part Number | PHX23NQ11T |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | N-channel enhancement mode field-effect transistor in a fully isolated encapsulated plastic package using TrenchMOS™ technology. 1.2 Features s Low on-state resistance s Isolated package. 1.3 Applica... |
| Features |
s Low on-state resistance s Isolated package.
1.3 Applications
s DC-to-DC converters s Switched-mode power supplies.
1.4 Quick reference data
s VDS ≤ 110 V s Ptot ≤ 41.6 W s ID ≤ 16 A s RDSon ≤ 70 mΩ.
2. Pinning information
Table 1: Pin 1 2 3 mb Pinning - SOT186A (TO-220F) simplified outline and symbol Description gate (g) drain (d) source (s) mounting base; isolated
g
mbb076
Simplified outline
mb
Symbol
d
s
1 2 3
MBK110
SOT186A (TO-220F)
Philips Semiconductors
PHX23NQ11T
N-channel TrenchMOS™ standard level FET
w w w . D a t a S h e e t 4
3. Ordering information
Table 2: Ordering in... |
| Document |
 PHX23NQ11T Data Sheet
PDF 118.25KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PHX23NQ10T |
NXP |
N-channel TrenchMOS transistor |
|
| 2 | PHX20N06T |
NXP |
N-channel standard level FET |
|
| 3 | PHX27NQ11T |
NXP |
N-Channel MOSFET |
|
| 4 | PHX2N40E |
NXP |
PowerMOS transistor Isolated version of PHP4N40E |
|
| 5 | PHX2N50E |
NXP |
PowerMOS transistors Avalanche energy rated |
|