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N-channel enhancement mode field-effect power transistor in a plastic full pack envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHX14NQ20T is supplied in the SOT186A (FPAK) conventional leaded package. PINNING PIN 1 2 3 case gate dr.
• ’Trench’ technology
• Low on-state resistance
• Fast switching
SYMBOL
d
QUICK REFERENCE DATA VDSS = 200 V ID = 7.6 A
g
RDS(ON) ≤ 230 mΩ
s
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic full pack envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHX14NQ20T is supplied in the SOT186A (FPAK) conventional leaded package.
PINNING
PIN 1 2 3 case gate drain source isolated DESCRIPTION
SOT186A (FPAK)
case
SOT186 (FPAK)
case
1 .
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