PHX23NQ10T - NXP

PHX23NQ10T N-channel TrenchMOS transistor

N-channel enhancement mode field-effect power transistor in a plastic full pack envelope using ’trench’ technology. Applications:• d.c. to d.c. converters • switched mode power supplies • T.V. and computer monitor power supplies The PHX23NQ10T is supplied in the SOT186A (FPAK) conventional leaded package. PINNING PIN 1 2 3 case DESCRIPTION gate drain source.

Features

• ’Trench’ technology
• Low on-state resistance
• Fast switching SYMBOL d QUICK REFERENCE DATA VDSS = 100 V ID = 13 A g RDS(ON) ≤ 70 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope using ’trench’ technology. Applications:
• d.c. to d.c. converters
• switched mode power supplies
• T.V. and computer monitor power supplies The PHX23NQ10T is supplied in the SOT186A (FPAK) conventional leaded package. PINNING PIN 1 2 3 case DESCRIPTION gate drain source isolated SOT186A (FPAK) case 1 2 3 LIMITING VALUES Limiting values in acco.