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N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in automotive applications, Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Dr.
ation Storage temperature Junction temperature CONDITIONS RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 60 60 30 41 29 164 125 175 175 UNIT V V V A A A W ˚C ˚C THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS TYP. 60 MAX. 1.2 UNIT K/W K/W August 1996 1 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor PHP36N06E STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IDSS IGSS RDS(ON) PARAMETER Drai.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PHP36N03LT |
nexperia |
N-Channel MOSFET |
|
| 2 | PHP36N03LT |
NXP |
N-channel TrenchMOS logic level FET |
|
| 3 | PHP30 |
Semtech Corporation |
7/500 & 15/000 Watt TVS Module |
|
| 4 | PHP3055 |
NXP |
N-channel TrenchMOS transistor |
|
| 5 | PHP3055 |
NXP |
PowerMOS transistor Logic level FET |
|
| 6 | PHP3055E |
NXP |
N-channel TrenchMOS transistor |
|
| 7 | PHP3055L |
NXP |
PowerMOS transistor Logic level FET |
|
| 8 | PHP30NQ15T |
NXP |
N-Channel MOSFET |
|
| 9 | PHP30NQ15T |
nexperia |
N-channel MOSFET |
|
| 10 | PHP30NQ15T |
INCHANGE |
N-Channel MOSFET |
|
| 11 | PHP32N06LT |
NXP Semiconductors |
N-channel enhancement mode field effect transistor |
|
| 12 | PHP33N10 |
NXP |
PowerMOS transistor |
|