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PHP36N06E |
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| Part Number | PHP36N06E |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in automotive applications, Switched Mode Power Supplies (SMPS), motor control, welding, ... |
| Features |
ation Storage temperature Junction temperature CONDITIONS RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 60 60 30 41 29 164 125 175 175 UNIT V V V A A A W ˚C ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS TYP. 60 MAX. 1.2 UNIT K/W K/W
August 1996
1
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
PHP36N06E
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IDSS IGSS RDS(ON) PARAMETER Drai... |
| Document |
 PHP36N06E Data Sheet
PDF 51.83KB |
| Distributor | Stock | Price | Buy |
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