PHP33N10 - NXP

PHP33N10 PowerMOS transistor

N-channel enhancement mode field-effect power transistor in a plastic envelope featuring stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot .

Features

emperature range CONDITIONS Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C Tmb > 25 ˚C MIN. - 55 MAX. 34 24 136 150 1.167 ± 30 175 UNIT A A A W W/K V ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. TYP. 60 MAX. 1 UNIT K/W K/W April 1998 1 Rev 1.100 Philips Semiconductors Product specification PowerMOS transistor PHP33N10 ELECTRICAL CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL V(BR)DSS ∆V(BR)DSS / ∆Tj RDS(ON) VGS(TO) gfs IDSS IGSS Qg(tot.