PHP36N03LT - nexperia

PHP36N03LT N-Channel MOSFET

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits  Simple gate drive required due to low gate charge  Suitable for logic level gate drive sour.

Features

 Simple gate drive required due to low gate charge
 Suitable for logic level gate drive sources 1.3 Applications
 DC-to-DC convertors
 Switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source Tj ≥ 25 °C; Tj ≤ 175 °C voltage ID drain current Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3 Ptot total power Tmb = 25 °C; see Figure 2 dissipation Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 9; see Figure 10 Dynamic c.