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PHP3055E - NXP

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PHP3055E N-channel TrenchMOS transistor

N-channel enhancement mode, field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:• d.c. to d.c. converters • switched mode power supplies The PHP3055E is supplied in the SOT78 (TO220AB) conventional leaded package. The PHD3055E is supplied in the SOT428 (DPAK) surface mounting package. PINNING PIN 1 2 3 tab gate drain1.

Features


• ’Trench’ technology
• Low on-state resistance
• Fast switching SYMBOL d QUICK REFERENCE DATA VDSS = 55 V ID = 10.3 A g RDS(ON) ≤ 150 mΩ (VGS = 10 V) s GENERAL DESCRIPTION N-channel enhancement mode, field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:
• d.c. to d.c. converters
• switched mode power supplies The PHP3055E is supplied in the SOT78 (TO220AB) conventional leaded package. The PHD3055E is supplied in the SOT428 (DPAK) surface mounting package. PINNING PIN 1 2 3 tab gate drain1 source DESCRIPTION SOT78 (TO220AB) tab SOT428 (DPAK) tab 2 .

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