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N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP30NQ15T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB30NQ15T is supplied in the SOT404.
• ’Trench’ technology
• Very low on-state resistance
• Fast switching
• Low thermal resistance
SYMBOL
d
QUICK REFERENCE DATA VDSS = 150 V ID = 29 A
g
RDS(ON) ≤ 63 mΩ
s
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP30NQ15T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB30NQ15T is supplied in the SOT404 (D2PAK) surface mounting package.
PINNING
PIN .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PHB32N06LT |
nexperia |
N-channel MOSFET |
|
| 2 | PHB32N06LT |
NXP Semiconductors |
N-channel enhancement mode field effect transistor |
|
| 3 | PHB33NQ20T |
NXP |
N-channel TrenchMOS standard level FET |
|
| 4 | PHB33NQ20T |
nexperia |
N-channel MOSFET |
|
| 5 | PHB34NQ10T |
NXP |
N-channel TrenchMOS transistor |
|
| 6 | PHB36N06E |
NXP |
PowerMOS transistor |
|
| 7 | PHB37N06LT |
NXP |
TrenchMOS transistor Logic level FET |
|
| 8 | PHB37N06T |
NXP |
TrenchMOS transistor Standard level FET |
|
| 9 | PHB38N02LT |
NXP |
TrenchMOS logic level FET |
|
| 10 | PHB3N40E |
NXP |
PowerMOS transistors Avalanche energy rated |
|
| 11 | PHB3N50E |
NXP |
PowerMOS transistors Avalanche energy rated |
|
| 12 | PHB3N60E |
NXP |
PowerMOS transistors Avalanche energy rated |
|