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N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:• d.c. to d.c. converters • switched mode power supplies The PHP34NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB34NQ10T is supplied in the SOT404 (D2PAK) surface mounting package. The PHD34NQ10T is supplied in .
• ’Trench’ technology
• Low on-state resistance
• Fast switching
• Low thermal resistance
SYMBOL
VDSS = 100 V ID = 35 A
g
RDS(ON) ≤ 40 mΩ
s
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:
• d.c. to d.c. converters
• switched mode power supplies The PHP34NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB34NQ10T is supplied in the SOT404 (D2PAK) surface mounting package. The PHD34NQ10T is supplied in the SOT428 (DPAK) surface mounting package.
PINNING
PIN 1 2 3 tab DESCRIPTI.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PHB30NQ15T |
NXP |
N-channel TrenchMOS transistor |
|
| 2 | PHB32N06LT |
nexperia |
N-channel MOSFET |
|
| 3 | PHB32N06LT |
NXP Semiconductors |
N-channel enhancement mode field effect transistor |
|
| 4 | PHB33NQ20T |
NXP |
N-channel TrenchMOS standard level FET |
|
| 5 | PHB33NQ20T |
nexperia |
N-channel MOSFET |
|
| 6 | PHB36N06E |
NXP |
PowerMOS transistor |
|
| 7 | PHB37N06LT |
NXP |
TrenchMOS transistor Logic level FET |
|
| 8 | PHB37N06T |
NXP |
TrenchMOS transistor Standard level FET |
|
| 9 | PHB38N02LT |
NXP |
TrenchMOS logic level FET |
|
| 10 | PHB3N40E |
NXP |
PowerMOS transistors Avalanche energy rated |
|
| 11 | PHB3N50E |
NXP |
PowerMOS transistors Avalanche energy rated |
|
| 12 | PHB3N60E |
NXP |
PowerMOS transistors Avalanche energy rated |
|