PHB37N06LT - NXP

PHB37N06LT TrenchMOS transistor Logic level FET

N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP37N06LT is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB37N06LT is supplied.

Features

• ’Trench’ technology
• Very low on-state resistance
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance PHP37N06LT, PHB37N06LT, PHD37N06LT SYMBOL d QUICK REFERENCE DATA VDSS = 55 V ID = 37 A g s RDS(ON) ≤ 35 mΩ (VGS = 5 V) RDS(ON) ≤ 32 mΩ (VGS = 10 V) GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP.