N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drai.
Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 60 60 30 41 29 164 125 175 175 UNIT V V V A A A W ˚C ˚C THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS minimum footprint, FR4 board (see Fig. 18). TYP. 50 MAX. 1.2 UNIT K/W K/W August 1996 1 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor PHB36N06E STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IDSS IGSS RDS(ON) PARAMETER Drain-source breakdown voltag.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PHB30NQ15T |
NXP |
N-channel TrenchMOS transistor | |
2 | PHB32N06LT |
nexperia |
N-channel MOSFET | |
3 | PHB32N06LT |
NXP Semiconductors |
N-channel enhancement mode field effect transistor | |
4 | PHB33NQ20T |
NXP |
N-channel TrenchMOS standard level FET | |
5 | PHB33NQ20T |
nexperia |
N-channel MOSFET | |
6 | PHB34NQ10T |
NXP |
N-channel TrenchMOS transistor | |
7 | PHB37N06LT |
NXP |
TrenchMOS transistor Logic level FET | |
8 | PHB37N06T |
NXP |
TrenchMOS transistor Standard level FET | |
9 | PHB38N02LT |
NXP |
TrenchMOS logic level FET | |
10 | PHB3N40E |
NXP |
PowerMOS transistors Avalanche energy rated | |
11 | PHB3N50E |
NXP |
PowerMOS transistors Avalanche energy rated | |
12 | PHB3N60E |
NXP |
PowerMOS transistors Avalanche energy rated |