PHB30NQ15T NXP N-channel TrenchMOS transistor Datasheet, en stock, prix

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PHB30NQ15T

NXP
PHB30NQ15T
PHB30NQ15T PHB30NQ15T
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Part Number PHB30NQ15T
Manufacturer NXP (https://www.nxp.com/)
Description N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and...
Features
• ’Trench’ technology
• Very low on-state resistance
• Fast switching
• Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 150 V ID = 29 A g RDS(ON) ≤ 63 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP30NQ15T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB30NQ15T is supplied in the SOT404 (D2PAK) surface mounting package. PINNING PIN ...

Document Datasheet PHB30NQ15T Data Sheet
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