PHB33NQ20T - nexperia

PHB33NQ20T N-channel MOSFET

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits „ Higher operating power due to low thermal resistance „ Low conduction losses due to low on.

Features

„ Higher operating power due to low thermal resistance „ Low conduction losses due to low on-state resistance „ Simple gate drive required due to low gate charge „ Suitable for high frequency applications due to fast switching characteristics 1.3 Applications „ DC-to-DC primary side switching 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3 Ptot total power dissipation Tmb = 25 °C; see Figure 2 Dynamic characteristics QGD gate-drain ch.