www.DataSheet4U.com • 5 WATTS REGULATED OUTPUT POWER • 2:1 WIDE INPUT VOLTAGE RANGE • INTERNATIONAL SAFETY STANDARD APPROVAL • OVER CURRENT PROTECTION • HIGH EFFICIENCY UP TO 80% • STANDARD 24 PIN DIP PACKAGE & SMD TYPE PACKAGE UL E193009 TUV R50008270 CB JPTUV-003680 CE MARK The PFKC05 series offer 5 watts of output power from a package in an IC compatib.
1600VDC of isolation and, short-circuit protection and suffix “ H ” can get 3000VDC isolation. All models are particularly suited to telecommunications, industrial, mobile telecom and test equipment applications. T E C H N I C A L S P E C I F I C AT I O N OUTPUT SPECIFICATIONS Output power Voltage accuracy Minimum load (Note 1) Line regulation Load regulation LL to HL at Full Load 25% to 100% FL Single Dual Full load and nominal Vin All specifications are typical at nominal input, full load and 25ºC otherwise noted GENERAL SPECIFICATIONS 5 Watts max ± 2% 10% of FL ± 0.2% ± 0.5% ± 2% ± 5% Ef.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PFKC03 |
ETC |
3 WATTS REGULATED OUTPUT POWER | |
2 | PF0010 |
Renesas Technology |
High Frequency Power MOS FET Module | |
3 | PF00105A |
Hitachi Semiconductor |
MOS FET Power Amplifier Module for AMPS Handy Phone | |
4 | PF0027 |
Renesas Technology |
MOS FET Power Amplifier Module | |
5 | PF0030 |
Hitachi Semiconductor |
MOS FET Power Amplifier | |
6 | PF0031 |
Hitachi |
MOS FET Power Amplifier Module | |
7 | PF0032 |
Hitachi Semiconductor |
MOS FET Power Amplifier | |
8 | PF0100 |
NXP |
14-channel configurable power management | |
9 | PF0100Z |
NXP |
14-channel configurable power management | |
10 | PF0121 |
Hitachi Semiconductor |
MOS FET Power Amplifier Module for GSM Mobile Phone | |
11 | PF01410A |
Hitachi Semiconductor |
MOS FET Power Amplifier Module for GSM Handy Phone | |
12 | PF01411A |
Hitachi Semiconductor |
MOS FET Power Amplifier Module for E-GSM Handy Phone |