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PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8560Z 2. Features and benefits • High voltage • Low collector-emitter saturation voltage VCEsat • High collector current capability IC • High collector current gain hFE at high IC • AEC.
• High voltage
• Low collector-emitter saturation voltage VCEsat
• High collector current capability IC
• High collector current gain hFE at high IC
• AEC-Q101 qualified
3. Applications
• Electronic ballast for fluorescent lighting
• LED driver for LED chain module
• LCD backlighting
• HID front lighting
• Automotive motor management
• Hook switch for wired telecom
• Switch Mode Power Supply (SMPS)
4. Quick reference data
Table 1. Symbol VCEO
IC hFE
Quick reference data Parameter collector-emitter voltage
collector current
DC current gain
Conditions open base
VCE = -10 V; IC = -50 mA; Tam.
PBHV9560Z - NXP Semiconductors
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Moun.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PBHV9515QA |
nexperia |
PNP Transistor |
|
| 2 | PBHV9540X |
nexperia |
PNP Transistor |
|
| 3 | PBHV9540Z |
nexperia |
PNP Transistor |
|
| 4 | PBHV9040T |
NXP Semiconductors |
0.25A PNP high-voltage low VCEsat (BISS) transistor |
|
| 5 | PBHV9040T |
nexperia |
PNP transistor |
|
| 6 | PBHV9040X |
nexperia |
PNP Transistor |
|
| 7 | PBHV9040Z |
nexperia |
PNP Transistor |
|
| 8 | PBHV9050T |
NXP Semiconductors |
150mA PNP high-voltage low VCEsat (BISS) transistor |
|
| 9 | PBHV9050Z |
nexperia |
PNP Transistor |
|
| 10 | PBHV9115T |
NXP Semiconductors |
1 A PNP high-voltage low VCEsat (BISS) transistor |
|
| 11 | PBHV9115TLH |
nexperia |
PNP Transistor |
|
| 12 | PBHV9115X |
NXP |
1 A PNP high-voltage low VCEsat (BISS) transistor |
|