PBHV9540Z - nexperia

PBHV9540Z PNP Transistor

PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8140Z. 1.2 Features „ High voltage „ Low collector-emitter saturation voltage VCEsat „ High collector current capability IC and ICM „ High collector current gain (hFE) at high IC „ AEC-.

Features

„ High voltage „ Low collector-emitter saturation voltage VCEsat „ High collector current capability IC and ICM „ High collector current gain (hFE) at high IC „ AEC-Q101 qualified „ Medium power SMD plastic package 1.3 Applications „ LED driver for LED chain module „ LCD backlighting „ Automotive motor management „ Switch Mode Power Supply (SMPS) 1.4 Quick reference data Table 1. Symbol VCESM VCEO IC hFE Quick reference data Parameter collector-emitter peak voltage collector-emitter voltage collector current DC current gain [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. Conditions VBE = 0 V open.