P55N02LD - Niko

P55N02LD N-Channel Logic Level Enhancement

NIKO-SEM www.DataSheet4U.com N-Channel Logic Level Enhancement Mode Field Effect Transistor P55N02LD TO-252 (DPAK) D PRODUCT SUMMARY V(BR)DSS 25 RDS(ON) 10mΩ ID 55A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avala.

Features

(TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125 °C 25 1 1.5 3 ±250 25 250 nA µA V LIMITS UNIT MIN TYP MAX 1 MAY-24-2001 NIKO-SEM www.DataSheet4U.com 1 N-Channel Logic Level Enhancement Mode Field Effect Transistor ID(ON) RDS(ON) 1 P55N02LD TO-252 (DPAK) On-State Drain Current Drain-Source On-State 1 Resistance VDS = .