P55NE06L - ST Microelectronics

P55NE06L STP55NE06L

This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibil.

Features

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• ) P t ot Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor o o V V V 28 20 220 35 0.23 2000 A A A W W/ C V V/ns o o o 55 39 220 130 0.86  7 -65 to 175 175 V ISO dV/dt T stg Tj Insulation W ithstand Voltage (DC) Peak Diode Recovery voltage slope Storage Temperature Max. O perating Junction Temperature C C 1/6 (
•) Pulse width limited by safe operating area ( 1) ISD ≤ 55 A, di/dt ≤ 300 A/µs, VDD.