This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL s DC-DC & DC-AC.
= 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating F actor V ISO dv/dt T stg Tj Insulation Withstand Voltage (DC) Peak Diode Recovery voltage slope Storage T emperature Max. O perating Junction Temperature
o o o
Uni t
STP55NE06FP 60 60 ± 20 V V V 30 21 220 35 0.27 2000 7 A A A W W/ C V V/ ns
o o o
55 39 220 130 0.96
-65 to 175 175
( 1) ISD ≤ 55 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
C C 1/9
(
•) Pulse width limited by safe operating area
January 1998
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | P55NE06L |
ST Microelectronics |
STP55NE06L | |
2 | P55N02LD |
Niko |
N-Channel Logic Level Enhancement | |
3 | P55N06 |
Fairchild Semiconductor |
FDP55N06 | |
4 | P55N06L |
STMicroelectronics |
STP55N06L | |
5 | P55NF06 |
ST Microelectronics |
STP55NF06 | |
6 | P55NF06 |
Thinki Semiconductor |
N-CHANNEL POWER MOSFET TRANSISTOR | |
7 | P55NF06FP |
STMicroelectronics |
N-channel MOSFET | |
8 | P55NF06L |
STMicroelectronics |
STP55NF06L | |
9 | P5503QV |
UNIKC |
N&P-Channel MOSFET | |
10 | P5504EDG |
UNIKC |
P-Channel MOSFET | |
11 | P5504EDG |
Niko-Sem |
P-Channel Logic Level Enhancement | |
12 | P5504EVG |
UNIKC |
P-Channel MOSFET |