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Features
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(TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125 °C 25 1 1.5 3 ±250 25 250 nA µA V LIMITS UNIT MIN TYP MAX
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MAY-24-2001
NIKO-SEM
www.DataSheet4U.com
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N-Channel Logic Level Enhancement Mode Field Effect Transistor
ID(ON) RDS(ON)
1
P55N02LD
TO-252 (DPAK)
On-State Drain Current Drain-Source On-State 1 Resistance
VDS = ...
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P55N02LD Data Sheet
