This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 3 1 D2PAK 123 I2PAK 3 2 1 TO-220 In.
Type STP55NF06L STB55NF06L STB55NF06L-1
VDSS 60V 60V 60V
RDS(on) <0.018Ω <0.018Ω <0.018Ω
■ Exceptional dv/dt capability
■ 100% avalanche tested
■ Application oriented characterization
ID 55A 55A 55A
Description
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
3 1
D2PAK
123
I2PAK
3 2 1
TO-220
Internal schematic diagra.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | P55NF06 |
ST Microelectronics |
STP55NF06 | |
2 | P55NF06 |
Thinki Semiconductor |
N-CHANNEL POWER MOSFET TRANSISTOR | |
3 | P55NF06FP |
STMicroelectronics |
N-channel MOSFET | |
4 | P55N02LD |
Niko |
N-Channel Logic Level Enhancement | |
5 | P55N06 |
Fairchild Semiconductor |
FDP55N06 | |
6 | P55N06L |
STMicroelectronics |
STP55N06L | |
7 | P55NE06 |
STMicroelectronics |
STP55NE06 | |
8 | P55NE06L |
ST Microelectronics |
STP55NE06L | |
9 | P5503QV |
UNIKC |
N&P-Channel MOSFET | |
10 | P5504EDG |
UNIKC |
P-Channel MOSFET | |
11 | P5504EDG |
Niko-Sem |
P-Channel Logic Level Enhancement | |
12 | P5504EVG |
UNIKC |
P-Channel MOSFET |