These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DCDC converters for telecom and computer applications, and applications with low gate charge d.
Order code STB55NF06 STP55NF06 STP55NF06FP
VDSS RDS(on) max.
ID
60 V
< 0.018 Ω
50 A 50 A (1)
1. Refer to soa for the max allowable current value on FP-type due to Rth value
■ 100% avalanche tested
■ Exceptional dv/dt capability
Applications
■ Switching application
Description
These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DCDC converters for telecom and computer applic.
12 3 TO-251/IPAK Thinkisemi 50N06 is three-terminal silicon device with current conduction capability of about 50A, fas.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | P55NF06FP |
STMicroelectronics |
N-channel MOSFET | |
2 | P55NF06L |
STMicroelectronics |
STP55NF06L | |
3 | P55N02LD |
Niko |
N-Channel Logic Level Enhancement | |
4 | P55N06 |
Fairchild Semiconductor |
FDP55N06 | |
5 | P55N06L |
STMicroelectronics |
STP55N06L | |
6 | P55NE06 |
STMicroelectronics |
STP55NE06 | |
7 | P55NE06L |
ST Microelectronics |
STP55NE06L | |
8 | P5503QV |
UNIKC |
N&P-Channel MOSFET | |
9 | P5504EDG |
UNIKC |
P-Channel MOSFET | |
10 | P5504EDG |
Niko-Sem |
P-Channel Logic Level Enhancement | |
11 | P5504EVG |
UNIKC |
P-Channel MOSFET | |
12 | P5504EVG |
Niko |
P-Channel Logic Level Enhancement Mode Field Effect Transistor |