Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
t(sUsing the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad- cvanced family of power MOSFETs with outstanding uperformances. The new patent pending strip layout rodcoupled with the Company’s proprieraty edge termi- nation structure, gives the lowest RDS(on) per area, Pexceptional avalanche and dv/dt capabilities and teunriva.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | P4NB10 |
ST Microelectronics |
STP4NB10 |
|
| 2 | P4NB100 |
ST Microelectronics |
STP4NB100 |
|
| 3 | P4NB80 |
STMicroelectronics |
STP4NB80 |
|
| 4 | P4NB80FP |
STMicroelectronics |
STP4NB80FP |
|
| 5 | P4N05L |
Intersil Corporation |
RFP4N05L |
|
| 6 | P4N150 |
STMicroelectronics |
N-CHANNEL MOSFET |
|
| 7 | P4N20 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 8 | P4N60 |
Fairchild Semiconductor |
SSP4N60 |
|
| 9 | P4N80E |
Motorola |
MTP4N80E |
|
| 10 | P4NA40F1 |
ST Microelectronics |
STP4NA40F1 |
|
| 11 | P4NA60FI |
STMicroelectronics |
STP4NA60FI |
|
| 12 | P4NA80 |
ST Microelectronics |
STP4NA80 N-Channel MOS Transistor |
|