www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µ A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ.) SSP4N60AS BVDSS = 600 V RDS(on) = 2.5 Ω ID = 4 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Abs.
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µ A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ.) SSP4N60AS BVDSS = 600 V RDS(on) = 2.5 Ω ID = 4 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 oC) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitiv.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | P4N05L |
Intersil Corporation |
RFP4N05L | |
2 | P4N150 |
STMicroelectronics |
N-CHANNEL MOSFET | |
3 | P4N20 |
STMicroelectronics |
N-channel Power MOSFET | |
4 | P4N80E |
Motorola |
MTP4N80E | |
5 | P4NA40F1 |
ST Microelectronics |
STP4NA40F1 | |
6 | P4NA60FI |
STMicroelectronics |
STP4NA60FI | |
7 | P4NA80 |
ST Microelectronics |
STP4NA80 N-Channel MOS Transistor | |
8 | P4NA80FI |
ST Microelectronics |
STP4NA80FI | |
9 | P4NB10 |
ST Microelectronics |
STP4NB10 | |
10 | P4NB100 |
ST Microelectronics |
STP4NB100 | |
11 | P4NB50 |
STMicroelectronics |
N-CHANNEL MOSFET | |
12 | P4NB80 |
STMicroelectronics |
STP4NB80 |