This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-A.
•) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain-gate Voltage (RG S = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
o o
Value STP4NA60FI 600 600 ± 30 4.3 2.8 17.2 100 0.8 -65 to 150 150 2.7 1.8 17.2 40 0.32 2000
Unit
V V V A A A W W/o C V
o o
C C
(
•) Pulse width limited by safe operating area
November 1996
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STP4NA60/FI
THE.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | P4NA40F1 |
ST Microelectronics |
STP4NA40F1 | |
2 | P4NA80 |
ST Microelectronics |
STP4NA80 N-Channel MOS Transistor | |
3 | P4NA80FI |
ST Microelectronics |
STP4NA80FI | |
4 | P4N05L |
Intersil Corporation |
RFP4N05L | |
5 | P4N150 |
STMicroelectronics |
N-CHANNEL MOSFET | |
6 | P4N20 |
STMicroelectronics |
N-channel Power MOSFET | |
7 | P4N60 |
Fairchild Semiconductor |
SSP4N60 | |
8 | P4N80E |
Motorola |
MTP4N80E | |
9 | P4NB10 |
ST Microelectronics |
STP4NB10 | |
10 | P4NB100 |
ST Microelectronics |
STP4NB100 | |
11 | P4NB50 |
STMicroelectronics |
N-CHANNEL MOSFET | |
12 | P4NB80 |
STMicroelectronics |
STP4NB80 |