P4N20 - STMicroelectronics

P4N20 N-channel Power MOSFET

® STP4N20 N - CHANNEL 200V - 1.3 Ω - 4A TO-220 POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP4N20 200 V < 1.5 Ω 4A s TYPICAL RDS(on) = 1.3 Ω s AVALANCHE RUGGED TECHNOLOGY ) s 100% AVALANCHE TESTED t(s s LOW GATE CHARGE s HIGH CURRENT CAPABILITY c s 150 oC OPERATING TEMPERATURE du s APPLICATION ORIENTED ro CHARACTERIZATION P APPLICATIONS te s HIGH C.

Features

e Temperature Tj Max. Operating Junction Temperature (
•) Pulse width limited by safe operating area -65 to 150 oC 150 oC February 1999 1/8 STP4N20 THERMAL DATA Rthj-case Rthj-amb Rthc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 2.08 62.5 0.5 300 oC/W oC/W oC/W oC AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive 4 A (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy ) (star.