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MOSFET - Power, Single N-Channel, WDFN6 20 V NTLJS3D0N02P8Z Features • Small Footprint (4 mm2) for Compact Design • Ultra−Low RDS(on) to Minimize Conduction Losses • These Devices are Pb−Free, Halogen−Free/BFR−Free and are RoHS Compliant Applications • Wireless Charging • Power Load Switch • Power Management and Protection • Battery Management • DC−DC Conv.
• Small Footprint (4 mm2) for Compact Design
• Ultra−Low RDS(on) to Minimize Conduction Losses
• These Devices are Pb−Free, Halogen−Free/BFR−Free and are RoHS
Compliant
Applications
• Wireless Charging
• Power Load Switch
• Power Management and Protection
• Battery Management
• DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
20
V
Gate−to−Source Voltage
VGS
±12
V
Continuous Drain Cur- Steady TA = 25°C
ID
20.2 A
rent RqJA (Notes 1, 3) State
TA = 85°C
14.6
Power Dissipation RqJA (Notes 1, 3)
TA = 25°C
.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NTLJS3113P |
ON Semiconductor |
Power MOSFET |
|
| 2 | NTLJS3180PZ |
ON Semiconductor |
Power MOSFET |
|
| 3 | NTLJS1102P |
ON Semiconductor |
Power MOSFET |
|
| 4 | NTLJS2103P |
ON Semiconductor |
P-Channel Power MOSFET |
|
| 5 | NTLJS4114N |
ON Semiconductor |
Power MOSFET |
|
| 6 | NTLJS4149P |
ON Semiconductor |
Power MOSFET |
|
| 7 | NTLJS4159N |
ON Semiconductor |
Power MOSFET |
|
| 8 | NTLJD2104P |
ON Semiconductor |
Power MOSFET |
|
| 9 | NTLJD2105L |
ON Semiconductor |
POWER MOSFET |
|
| 10 | NTLJD3115P |
ON Semiconductor |
Power MOSFET |
|
| 11 | NTLJD3119C |
ON Semiconductor |
Power MOSFET |
|
| 12 | NTLJD3181PZ |
ON Semiconductor |
Power MOSFET |
|