Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Value Pull−up Resistor Typical 10 kW to 1.0 W* Optional Slew−Rate Control Output Capacitance Typical 0 kW to 100 kW* Usually < 1.0 mF CO, CI C1 Optional In−Rush Current Control Typical v 1000 pF *Minimum R1 value should be at least 10 x R2 to ensure Q1 turn−on. ORDERING INFORMATION Device NTLJD2105LTBG Package WDFN6 (Pb−Free) Shipping † 3000 / Tape & Reel .
• WDFN 2x2 mm Package with Exposed Drain Pads Offers Excellent
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Thermal Performance Low RDS(on) P−Channel Load Switch with N−channel MOSFET for Level Shift N Channel Operated at 1.5 V Gate Drive Voltage Level P Channel Operated at 1.5 V Supply Voltage Same Footprint as SC88 Low Profile (<0.8 mm) Allows it to Fit Easily into Extremely Thin Environments ESD Protection These are Pb−Free Devices
VINMAX
http://onsemi.com
RDS(on) MAX 50 mW @ 4.5 V 20 V 60 mW @ 2.5 V 80 mW @ 1.8 V 115 mW @ 1.5 V 4 Q2 6 2, 3 4.3 A IL MAX
Applications
• High Slide Load Switch with Level Shift
• Optimiz.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NTLJD2104P |
ON Semiconductor |
Power MOSFET |
|
| 2 | NTLJD3115P |
ON Semiconductor |
Power MOSFET |
|
| 3 | NTLJD3119C |
ON Semiconductor |
Power MOSFET |
|
| 4 | NTLJD3181PZ |
ON Semiconductor |
Power MOSFET |
|
| 5 | NTLJD3182FZ |
ON Semiconductor |
Power MOSFET and Schottky Diode |
|
| 6 | NTLJD4116N |
ON Semiconductor |
Power MOSFET |
|
| 7 | NTLJD4150P |
ON Semiconductor |
Power MOSFET |
|
| 8 | NTLJF1103P |
ON Semiconductor |
Power MOSFET and Schottky Diode |
|
| 9 | NTLJF3117P |
ON Semiconductor |
Power MOSFET and Schottky Diode |
|
| 10 | NTLJF3118N |
ON Semiconductor |
Power MOSFET and Schottky Diode |
|
| 11 | NTLJF4156N |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 12 | NTLJS1102P |
ON Semiconductor |
Power MOSFET |
|