NTLJD3115P - ON Semiconductor

NTLJD3115P Power MOSFET

NTLJD3115P Power MOSFET Features −20 V, −4.1 A, mCoolt Dual P−Channel, 2x2 mm WDFN Package • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • • Conduction 2x2 mm Footprint Same as SC−88 Lowest RDS(on) Solution in 2x2 mm Package 1.8 V RDS(on) Rating for Operation at Low Voltage Gate Drive Logic Level Low Profile (< 0.8 mm) for Easy Fit.

Features

−20 V, −4.1 A, mCoolt Dual P−Channel, 2x2 mm WDFN Package
• WDFN Package Provides Exposed Drain Pad for Excellent Thermal
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• Conduction 2x2 mm Footprint Same as SC−88 Lowest RDS(on) Solution in 2x2 mm Package 1.8 V RDS(on) Rating for Operation at Low Voltage Gate Drive Logic Level Low Profile (< 0.8 mm) for Easy Fit in Thin Environments Bidirectional Current Flow with Common Source Configuration This is a Pb−Free Device V(BR)DSS http://onsemi.com RDS(on) MAX 100 mW @ −4.5 V −20 V 135 mW @ −2.5 V 200 mW @ −1.8 V S1 S2 −4.1 A ID MAX (Note 1) Applications G1 G2
• Optimized for Batt.