NTLJS1102P - ON Semiconductor

NTLJS1102P Power MOSFET

NTLJS1102P www.DataSheet4U.com Power MOSFET −8 V, −8.1 A, mCOOL] Single P−Channel, 2x2 mm, WDFN package Features • WDFN Package with Exposed Drain Pad for Excellent Thermal • • • • • • Conduction Lowest RDS(on) in 2 x 2 mm Package 1.2 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate Drive 2 x 2 mm Footprint Same as SC−88 Package Low Profile .

Features

• WDFN Package with Exposed Drain Pad for Excellent Thermal
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• Conduction Lowest RDS(on) in 2 x 2 mm Package 1.2 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate Drive 2 x 2 mm Footprint Same as SC−88 Package Low Profile (<0.8 mm) for Easy Fit in Thin Environments This is a Halide−Free Device This is a Pb−Free Device http://onsemi.com V(BR)DSS RDS(on) MAX 36 mW @ −4.5 V 45 mW @ −2.5 V −8.0 V 68 mW @ −1.8 V 90 mW @ −1.5 V 300 mW @ −1.2 V S ID MAX −6.2 A −5.5 A −3.0 A −1.0 A −0.2 A Applications
• High Side Load Switch
• Li Ion Battery Linear Mode Charging
• Optimized .