NTLJD3181PZ Power MOSFET −20 V, −4.0 A,Dual P−Channel, ESD, 2x2 mm WDFN Package Features • WDFN 2x2 mm Package with Exposed Drain Pads for Excellent Thermal Conduction • Lowest RDS(on) Solution in 2x2 mm Package • Footprint Same as SC−88 Package • Low Profile (< 0.8 mm) for Easy Fit in Thin Environments • ESD Protected • This is a Pb−Free Device Applicatio.
• WDFN 2x2 mm Package with Exposed Drain Pads for Excellent
Thermal Conduction
• Lowest RDS(on) Solution in 2x2 mm Package
• Footprint Same as SC−88 Package
• Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
• ESD Protected
• This is a Pb−Free Device
Applications
• Optimized for Battery and Load Management Applications in
Portable Equipment
• Li−Ion Battery Charging and Protection Circuits
• High Side Load Switch
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
−20
V
Gate−to−Source Voltage
VGS
±8.0
V
Continuous Drai.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NTLJD3182FZ |
ON Semiconductor |
Power MOSFET and Schottky Diode | |
2 | NTLJD3115P |
ON Semiconductor |
Power MOSFET | |
3 | NTLJD3119C |
ON Semiconductor |
Power MOSFET | |
4 | NTLJD2104P |
ON Semiconductor |
Power MOSFET | |
5 | NTLJD2105L |
ON Semiconductor |
POWER MOSFET | |
6 | NTLJD4116N |
ON Semiconductor |
Power MOSFET | |
7 | NTLJD4150P |
ON Semiconductor |
Power MOSFET | |
8 | NTLJF1103P |
ON Semiconductor |
Power MOSFET and Schottky Diode | |
9 | NTLJF3117P |
ON Semiconductor |
Power MOSFET and Schottky Diode | |
10 | NTLJF3118N |
ON Semiconductor |
Power MOSFET and Schottky Diode | |
11 | NTLJF4156N |
ON Semiconductor |
N-Channel Power MOSFET | |
12 | NTLJS1102P |
ON Semiconductor |
Power MOSFET |