NTLJD3119C - ON Semiconductor

NTLJD3119C Power MOSFET

MOSFET – Power, Complementary, WDFN 2X2 mm 20 V/-20 V, 4.6 A/-4.1 A NTLJD3119C Features • Complementary N−Channel and P−Channel MOSFET • WDFN Package with Exposed Drain Pad for Excellent Thermal Conduction • Footprint Same as SC−88 Package • Leading Edge Trench Technology for Low On Resistance • 1.8 V Gate Threshold Voltage • Low Profile (< 0.8 mm) for Easy .

Features

• Complementary N−Channel and P−Channel MOSFET
• WDFN Package with Exposed Drain Pad for Excellent Thermal Conduction
• Footprint Same as SC−88 Package
• Leading Edge Trench Technology for Low On Resistance
• 1.8 V Gate Threshold Voltage
• Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
• This is a Pb−Free Device Applications
• Synchronous DC−DC Conversion Circuits
• Load/Power Management of Portable Devices like PDA’s, Cellular Phones and Hard Drives
• Color Display and Camera Flash Regulators DATA SHEET www.onsemi.com V(BR)DSS N−Channel 20 V P−Channel −20 V RDS(on) MAX 65 mW @ 4..