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NTLJF1103P Product Preview Power MOSFET and Schottky Diode −8 V, −4.3 A, mCool] P−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, WDFN Package Features • WDFN 2x2 mm Package with Exposed Drain Pad for Excellent Thermal Conduction • Footprint Same as SC−88 Package • 1.5 V VGS Rated RDS(on) • Low VF, 2 A Schottky Diode • Low Profile (< 0.8 mm) for Easy .
• WDFN 2x2 mm Package with Exposed Drain Pad for
Excellent Thermal Conduction
• Footprint Same as SC−88 Package
• 1.5 V VGS Rated RDS(on)
• Low VF, 2 A Schottky Diode
• Low Profile (< 0.8 mm) for Easy Fit in Thin Environment
• This is a Pb−Free Device
Applications
• DC−DC Buck Converter
• Low Voltage Hard Disk DC Power Source
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current
(Note 1)
Power Dissipation (Note 1)
Continuous Drain Current (Note 2)
Power Dissipation (Note 2)
Steady State.
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