NDS9430A - Fairchild

NDS9430A Single P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are.

Features

-5.3A, -20V. RDS(ON) = 0.05Ω @ VGS = -10V RDS(ON) = 0.065Ω @ VGS = -6V RDS(ON) = 0.09Ω @ VGS = -4.5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ___________________________________________________________________________________________ 5 6 7 4 3 2 1 8 Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed PD T A = 25°C unless otherwise noted NDS9430A -20 ± 20 (Note 1a) Units V V A ± 5.3 ± 20 Maximum Power Dissipatio.