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NDS9430A |
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| Part Number | NDS9430A |
| Manufacturer | Fairchild |
| Description | These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to ... |
| Features |
-5.3A, -20V. RDS(ON) = 0.05Ω @ VGS = -10V RDS(ON) = 0.065Ω @ VGS = -6V RDS(ON) = 0.09Ω @ VGS = -4.5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package.
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Absolute Maximum Ratings
Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed PD
T A = 25°C unless otherwise noted
NDS9430A -20 ± 20
(Note 1a)
Units V V A
± 5.3 ± 20
Maximum Power Dissipatio... |
| Document |
 NDS9430A Data Sheet
PDF 66.16KB |
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