This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Applications • Power management • Load switch • Battery protection Features • –5.3 A, –30 V RDS(ON) = 50 mΩ @ VGS = –10 V RDS(ON.
•
–5.3 A,
–30 V
RDS(ON) = 50 mΩ @ VGS =
–10 V RDS(ON) = 80 mΩ @ VGS =
–4.5 V
• Low gate charge
• Fast switching speed
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability
DDDD DD DD
SO-8
Pin 1 SO-8
SS SS SS GG
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS VGSS ID
PD
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current
– Continuous
– Pulsed Power Dissipation for Single Operation
(Note 1a)
(Note 1a) (Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Charac.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NDS9430 |
Fairchild |
30V P-Channel PowerTrench MOSFET | |
2 | NDS9430A |
Fairchild |
Single P-Channel MOSFET | |
3 | NDS9400A |
Fairchild |
Single P-Channel MOSFET | |
4 | NDS9405 |
ETC |
single P-Channel MOSFET | |
5 | NDS9407 |
Fairchild |
Single P-Channel MOSFET | |
6 | NDS9410A |
Fairchild |
Single N-channel MOSFET | |
7 | NDS9410S |
Fairchild |
Single N-channel MOSFET | |
8 | NDS96P |
INSIGNIS |
1M x 16 bit Synchronous DRAM | |
9 | NDS9925A |
Fairchild |
Dual N-Channel MOSFET | |
10 | NDS9933A |
Fairchild |
Dual P-Channel MOSFET | |
11 | NDS9936 |
Fairchild |
Dual N-Channel MOSFET | |
12 | NDS9945 |
Fairchild |
Dual N-Channel MOSFET |